Mitigating Short-channel Effects for Nanoscale IGZO Transistor by Suppressing Oxygen Diffusion into Metal Utilizing Ultrathin Dielectic Barrier | Intelligent Semiconductor and Wearable Devices

Mitigating Short-channel Effects for Nanoscale IGZO Transistor by Suppressing Oxygen Diffusion into Metal Utilizing Ultrathin Dielectic Barrier

2024/01/26
Juyoung Yun, Hyuk Park, Daehwan Kang, Yoonyoung Chung
Korean Conference on Semiconductors (KCS), Gyeongju, Korea

Category: Categories: Conference